Loss Mechanisms and Optimum Design Methodology for Efficient mm-Waves Class-E PAs

被引:3
作者
El-Aassar, Omar [1 ]
El-Nozahi, Mohamed [1 ]
Ragai, Hani Fikry [1 ]
机构
[1] Ain Shams Univ, Elect & Commun Dept, Fac Engn, Cairo 11566, Egypt
关键词
Class-E PA; integrated CMOS IC; millimeter-waves; E POWER-AMPLIFIER;
D O I
10.1109/TCSI.2016.2537999
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper, loss mechanisms of monolithic high frequency Class-E PAs are studied. The switching behavior is analyzed to understand the discrepancy between common design equations and optimal design values as frequency scales up. Analytical results are verified by spice simulations. In addition, a design recipe based on loss analysis and effective output duty cycle is proposed for mm-waves PAs to boost their power added efficiency (PAE). The design approach is adopted to compare different technology nodes including the 130 nm, 90 nm, and 65 nm bulk CMOS. Newer technologies show better PAE only at the mm-waves regime. Simulations show that the PAE is boosted from 31% to 40% when the proposed design methodology is applied at 60 GHz using the 65 nm node.
引用
收藏
页码:773 / 784
页数:12
相关论文
共 10 条
[1]  
Abbasian S, 2013, IEEE INT SYMP CIRC S, P610, DOI 10.1109/ISCAS.2013.6571916
[2]   High-Power High-Efficiency Class-E-Like Stacked mmWave PAs in SOI and Bulk CMOS: Theory and Implementation [J].
Chakrabarti, Anandaroop ;
Krishnaswamy, Harish .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2014, 62 (08) :1686-1704
[3]  
El-Aassar O, 2015, IEEE INT SYMP CIRC S, P1694, DOI 10.1109/ISCAS.2015.7168978
[4]   The class-E/F family of ZVS switching amplifiers [J].
Kee, SD ;
Aoki, I ;
Hajimiri, A ;
Rutledge, D .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2003, 51 (06) :1677-1690
[5]   Analysis of reliability and power efficiency in cascode class-E PAs [J].
Mazzanti, A ;
Larcher, L ;
Brama, R ;
Svelto, F .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2006, 41 (05) :1222-1229
[6]  
Ogunnika O. T., 2012, 2012 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), P65, DOI 10.1109/RFIC.2012.6242233
[7]   Design Procedure of Quasi-Class-E Power Amplifier for Low-Breakdown-Voltage Devices [J].
Sadeghpour, Reza ;
Nabavi, Abdolreza .
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS, 2014, 61 (05) :1416-1428
[8]   CLASS-E - NEW CLASS OF HIGH-EFFICIENCY TUNED SINGLE-ENDED SWITCHING POWER AMPLIFIERS [J].
SOKAL, NO ;
SOKAL, AD .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1975, SC10 (03) :168-176
[9]   HARMONIC OUTPUT OF CLASS-E RF POWER-AMPLIFIERS AND LOAD COUPLING NETWORK DESIGN [J].
SOKAL, NO ;
RAAB, FH .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1977, 12 (01) :86-88
[10]   A common-gate switched 0.9-W class-E power amplifier with 41% PAE in 0.25-μm CMOS [J].
Yoo, C ;
Huang, QT .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2001, 36 (05) :823-830