Nanostructured GaN sensors for Surface Enhanced Raman Spectroscopy

被引：12

作者：

Bartosewicz, B. ^{[1
]}

Andersson, Per Ola ^{[2
,3
]}

Dziecielewski, I ^{[4
]}

Jankiewicz, B. ^{[1
]}

Weyher, J. L. ^{[4
]}

机构：

[1] Mil Univ Technol, Inst Optoelect, Gen Witolda Urbanowicza 2, PL-00908 Warsaw, Poland

[2] Swedish Def Res Agcy, CBRN Def & Secur, FOI, Cementv 20, SE-90182 Umea, Sweden

[3] Uppsala Univ, Dept Engn Sci, Angstrom Lab, Appl Mat Sci, S-75121 Uppsala, Sweden

[4] Polish Acad Sci, Inst High Pressure Phys, Ul Sokolowska 29-37, PL-01142 Warsaw, Poland

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2019年 / 91卷

关键词：

Nanostructure; GaN; SERS; Hot-spots; SERS; SCATTERING; DISCRIMINATION; IDENTIFICATION; NANOPARTICLES; NANOPILLARS; MECHANISMS; BACTERIA;

D O I：

10.1016/j.mssp.2018.11.012

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The aim of this communication is to describe the range of applications of GaN-based platforms for trace detection and identification of biological and chemical agents using SERS technique. The methods of nano-structuring of GaN surface for SERS application are briefly described. The results of employing SERS method for analysis of Fentanyl and Bacillus Atrophaeus spores is demonstrated. The arguments are summarized which show the universal feature of GaN-based platforms as SERS sensor.

引用

页码：97 / 101

页数：5

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