Full voltage manipulation of the resistance of a magnetic tunnel junction

被引：51
作者：
Chen, Aitian [1 ]
Zhao, Yuelei [1 ]
Wen, Yan [1 ]
Pan, Long [2 ]
Li, Peisen [2 ]
Zhang, Xi-Xiang [1 ]
机构：
[1] King Abdullah Univ Sci & Technol, Phys Sci & Engn Div, Thuwal 239556900, Saudi Arabia
[2] Natl Univ Def Technol, Coll Intelligence Sci & Technol, Changsha 410073, Hunan, Peoples R China
来源：
SCIENCE ADVANCES | 2019年 / 5卷 / 12期
基金：
中国国家自然科学基金;
关键词：
RANDOM-ACCESS MEMORY; SPIN-ORBIT; ELECTRONICS; SPINTRONICS; ANISOTROPY;
D O I：
10.1126/sciadv.aay5141
中图分类号：
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号：
07 ; 0710 ; 09 ;
摘要：
One of the motivations for multiferroics research is to find an energy-efficient solution to spintronic applications, such as the solely electrical control of magnetic tunnel junctions. Here, we integrate spintronics and multiferroics by depositing MgO-based magnetic tunnel junctions on ferroelectric substrate. We fabricate two pairs of electrodes on the ferroelectric substrate to generate localized strain by applying voltage. This voltage-generated localized strain has the ability to modify the magnetic anisotropy of the free layer effectively. By sequentially applying voltages to these two pairs of electrodes, we successively and unidirectionally rotate the magnetization of the free layer in the magnetic tunnel junctions to complete reversible 180 degrees magnetization switching. Thus, we accomplish a giant nonvolatile solely electrical switchable high/low resistance in magnetic tunnel junctions at room temperature without the aid of a magnetic field. Our results are important for exploring voltage control of magnetism and low-power spintronic devices.
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页数：7
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