Magnetoresistance of the p-(InSb plus MnSb)/n-InSb diode structure

被引：2

作者：

Khramova, O. D. ^{[1
]}

Mikhalevsky, V. A. ^{[1
]}

Parshina, L. S. ^{[1
]}

Novodvorsky, O. A. ^{[1
]}

Marenkin, S. F. ^{[2
]}

Lotin, A. A. ^{[1
]}

Cherebilo, E. A. ^{[1
]}

Aronzon, B. A. ^{[3
]}

Aronov, A. N. ^{[2
]}

Panchenko, V. Ya. ^{[1
]}

机构：

[1] Russian Acad Sci, Inst Laser & Informat Technol, Svyatoozerskaya St 1, Shatura 140700, Moscow Region, Russia

[2] Russian Acad Sci, NS Kurnakov Inst Gen & Inorgan Chem, Leninsky Ave 31, Moscow 119991, Russia

[3] Natl Res Ctr Kurchatov Inst, Akad Kurchatova Pl 1, Moscow 123182, Russia

来源：

OPTICAL AND QUANTUM ELECTRONICS | 2016年 / 48卷 / 07期

基金：

俄罗斯基础研究基金会;

关键词：

Thin films; InMnSb; Magnetoresistance; Magnetic heterostructure; Pulse laser deposition;

D O I：

10.1007/s11082-016-0609-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The p-(InSb + MnSb)/n-InSb diode structures have been produced by the pulse laser deposition method on the n-InSb single-crystal substrates from the targets in which positive giant magnetoresistance at 298 K in forward bias and at the application of the magnetic field of 0.15 T was observed. The I-V characteristics of the diode structure changed under the application of a magnetic field both in the plane of the structure, and perpendicular to it at the room temperature. The current magnitude of diode at a voltage of 1 V in the magnetic field 0.15 T, parallel and perpendicular to the plane of the diode structure, decreased by more than by 3 times from 28 to 8.2 mA and than by 10 times from 28 to 2.7 mA accordingly The values of parasitic resistance, the size of magneto-resistive effect for the p-(InSb + MnSb)/n-InSb diode have been defined without application of a field and in the presence of the 0.15 T magnetic field in the plane and perpendicular to the transition plane. The spin polarization of carriers has been calculated.

引用

页数：8

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