Magnetoresistance of the p-(InSb plus MnSb)/n-InSb diode structure

被引：2

作者：

Khramova, O. D. ^{[1
]}

Mikhalevsky, V. A. ^{[1
]}

Parshina, L. S. ^{[1
]}

Novodvorsky, O. A. ^{[1
]}

Marenkin, S. F. ^{[2
]}

Lotin, A. A. ^{[1
]}

Cherebilo, E. A. ^{[1
]}

Aronzon, B. A. ^{[3
]}

Aronov, A. N. ^{[2
]}

Panchenko, V. Ya. ^{[1
]}

机构：

[1] Russian Acad Sci, Inst Laser & Informat Technol, Svyatoozerskaya St 1, Shatura 140700, Moscow Region, Russia

[2] Russian Acad Sci, NS Kurnakov Inst Gen & Inorgan Chem, Leninsky Ave 31, Moscow 119991, Russia

[3] Natl Res Ctr Kurchatov Inst, Akad Kurchatova Pl 1, Moscow 123182, Russia

来源：

OPTICAL AND QUANTUM ELECTRONICS | 2016年 / 48卷 / 07期

基金：

俄罗斯基础研究基金会;

关键词：

Thin films; InMnSb; Magnetoresistance; Magnetic heterostructure; Pulse laser deposition;

D O I：

10.1007/s11082-016-0609-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The p-(InSb + MnSb)/n-InSb diode structures have been produced by the pulse laser deposition method on the n-InSb single-crystal substrates from the targets in which positive giant magnetoresistance at 298 K in forward bias and at the application of the magnetic field of 0.15 T was observed. The I-V characteristics of the diode structure changed under the application of a magnetic field both in the plane of the structure, and perpendicular to it at the room temperature. The current magnitude of diode at a voltage of 1 V in the magnetic field 0.15 T, parallel and perpendicular to the plane of the diode structure, decreased by more than by 3 times from 28 to 8.2 mA and than by 10 times from 28 to 2.7 mA accordingly The values of parasitic resistance, the size of magneto-resistive effect for the p-(InSb + MnSb)/n-InSb diode have been defined without application of a field and in the presence of the 0.15 T magnetic field in the plane and perpendicular to the transition plane. The spin polarization of carriers has been calculated.

引用

页数：8

共 9 条

[1] Bard Y., 1974, Nonlinear parameter estimation
[2] Electrical transport in Mn-doped GaAs pn-diodes
Holmberg, H.
Lebedeva, N.
Novikov, S.
Kuivalainen, P.
Malfait, M.
Moshchalkov, V. V.
[J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2007, 204 (03): : 791 - 804
[3] Omni-directional reflectors for light-emitting diodes
Kim, Jong Kyu
Xi, J. -Q.
Schubert, E. Fred
[J]. LIGHT-EMITING DIODES: RESEARCH, MANUFACTURING, AND APPLICATIONS X, 2006, 6134
[4] Marenkin S.F., 2014, RUSS J INORG MAT, V50, P973
[5] High-field magnetoresistance in p-(In,Mn)As/n-InAs heterojunctions - art. no. 072105
May, SJ
Wessels, BW
[J]. APPLIED PHYSICS LETTERS, 2006, 88 (07)
[6] Electronic and magnetotransport properties of ferromagnetic p-(In,Mn)As/n-InAs heterojunctions
May, SJ
Wessels, BW
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2005, 23 (04): : 1769 - 1772
[7] Ferromagnetism of manganese-doped InSb alloys
Novotortsev, V. M.
Zakharov, I. S.
Kochura, A. V.
Marenkin, S. F.
Laiho, R.
Lahderanta, E.
Lashkul, A.
Veresov, A. G.
Molchanov, A. V.
Yur'ev, G. S.
[J]. RUSSIAN JOURNAL OF INORGANIC CHEMISTRY, 2006, 51 (10) : 1627 - 1631
[8] Synthesis and magnetic properties of the InSb-MnSb eutectic
Novotortsev, V. M.
Kochura, A. V.
Marenkin, S. F.
Fedorchenko, I. V.
Drogunov, S. V.
Lashkul, A.
Lahderanta, E.
[J]. RUSSIAN JOURNAL OF INORGANIC CHEMISTRY, 2011, 56 (12) : 1951 - 1956
[9] Spin-dependent magnetotransport in a p-InMnSb/n-InSb magnetic semiconductor heterojunction
Peters, J. A.
Rangaraju, N.
Feeser, C.
Wessels, B. W.
[J]. APPLIED PHYSICS LETTERS, 2011, 98 (19)

← 1 →