Identification of whisker grain in Sn coatings by analyzing crystallographic micro-texture using electron back-scatter diffraction

被引:33
|
作者
Jagtap, Piyush [1 ]
Chakraborty, Aritra [2 ]
Eisenlohr, Philip [2 ]
Kumar, Praveen [1 ]
机构
[1] Indian Inst Sci, Dept Mat Engn, Bangalore 560012, Karnataka, India
[2] Michigan State Univ, Dept Chem Engn & Mat Sci, E Lansing, MI 48824 USA
基金
美国国家科学基金会;
关键词
EBSD; Micro-texture mapping; Stress field mapping; Sn whisker; Whisker location; DYNAMIC RECRYSTALLIZATION DRX; THIN TIN FILMS; POLYKRISTALLINEM ZINN; SPONTANEOUS GROWTH; MECHANISM; NUCLEATION; DIFFUSION; ELECTROMIGRATION; DEFORMATION; STRAINS;
D O I
10.1016/j.actamat.2017.05.063
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Here, we attempt to understand the age-old question of "where do whiskers in Sn coatings grow?" by performing grain orientation mapping in conjunction with a simple analysis of the stress field in the vicinity of a whisker grain. Electron back-scatter diffraction (EBSD) was used for orientation mapping of Sn grains in a 4 gm thick Sn coating deposited on brass. It was observed that whiskers consistently grew from low-index grains with (100) or near-(100) orientations that were surrounded by grains with similar orientations, which were then partially surrounded by grains with high-index planes, such as (211), (321) and (420). Strong elastic anisotropy and overall a high fraction of high-angle grain boundaries were also consistently observed in the vicinity of whiskers. In addition, a full-field three-dimensional crystal elasticity simulations were performed using the EBSD orientation maps to analyze local stress variations in the vicinity of the whisker grain. These simulations indicate the presence of a high compressive hydrostatic stress around the whisker grain, which could then possibly create conducive conditions for whisker growth observed experimentally. (C) 2017 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
引用
收藏
页码:346 / 359
页数:14
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