High performance SOI and bulk CMOS 5GHz VCOs

被引：0
|
作者：
Kim, TY [1 ]
Adams, A [1 ]
Weste, N [1 ]
机构：
[1] Univ Adelaide, Adelaide, SA 5005, Australia
来源：
2003 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS | 2003年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents a comparison of two 5GHz VCOs. One is implemented in an SOI process and the other in a conventional bulk CMOS process. The SOI design presents the lowest reported power (1.65mW, -110dBc/Hz@1MHz) in a 5GHz VCO, while the bulk device presents the lowest phase noise achieved in a 5GHz VCO (17.25mW, 126dBc/Hz@1MHz). The design tradeoffs are discussed.
引用
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页码：93 / 96
页数：4
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