High-Performance GaN MOSFET With High-k LaAlO3/SiO2 Gate Dielectric

被引：76

作者：

Tsai, C. Y. ^{[1
]}

Wu, T. L. ^{[1
]}

Chin, Albert ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2012年 / 33卷 / 01期

关键词：

GaN; high k; LaAlO3; MOSFET; TRANSISTORS; INSULATOR; POWER;

D O I：

10.1109/LED.2011.2172911

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Using a high-k LaAlO3/SiO2 gate dielectric, the recessed-gate GaN MOSFET has a low threshold voltage (V-t) of 0.1 V, low on-resistance (R-on) of 13.5 Omega . mm, high breakdown voltage of 385 V, high transconductance (g(m)) of 136 mS/mm, and record-best normalized drive current (mu C-ox) of 172 mu A/V-2. Such excellent device integrity is due to the small capacitance equivalent thickness of 3.0 nm, using a high-k gate dielectric and recessed-gate etching.

引用

页码：35 / 37

页数：3

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