Robust surface electronic properties of topological insulators: Bi2Te3 films grown by molecular beam epitaxy

被引：50

作者：

Plucinski, L. ^{[1
]}

Mussler, G. ^{[2
,3
]}

Krumrain, J. ^{[2
,3
]}

Herdt, A. ^{[1
]}

Suga, S. ^{[1
,4
]}

Gruetzmacher, D. ^{[2
,3
]}

Schneider, C. M. ^{[1
,3
]}

机构：

[1] Forschungszentrum Julich, PGI 6, D-52425 Julich, Germany

[2] Forschungszentrum Julich, PGI 9, D-52425 Julich, Germany

[3] Julich Aachen Res Alliance Fundamentals Future In, D-52425 Julich, Germany

[4] Osaka Univ, Grad Sch Engn Sci, Osaka 5608531, Japan

来源：

APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 22期

关键词：

D O I：

10.1063/1.3595309

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The surface electronic properties of the important topological insulator Bi2Te3 are shown to be robust under an extended surface preparation procedure, which includes exposure to atmosphere and subsequent cleaning and recrystallization by an optimized in situ sputter-anneal procedure under ultrahigh vacuum conditions. Clear Dirac-cone features are displayed in high-resolution angle-resolved photoemission spectra from the resulting samples, indicating remarkable insensitivity of the topological surface state to cleaning-induced surface roughness. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3595309]

引用

页数：3

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