30 GHz bandwidth, 1.55 mu m MQW-DFB laser diode based on a new modulation scheme

被引：13

作者：

Goutain, E ^{[1
]}

Renaud, JC ^{[1
]}

Krakowski, M ^{[1
]}

Rondi, D ^{[1
]}

Blondeau, R ^{[1
]}

Decoster, D ^{[1
]}

机构：

[1] IEMN,CITE SCI,F-59652 VILLENEUVE DASCQ,FRANCE

来源：

ELECTRONICS LETTERS | 1996年 / 32卷 / 10期

关键词：

semiconductor junction lasers; semiconductor quantum wells;

D O I：

10.1049/el:19960588

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors present a new concept of modulation for a 1.55 mu m DFB MQW laser diode allowing generation of millimetre waves. The method consists in modulating the saturable absorber of a two-section laser. The improvements brought by the new concept are evaluated theoretically and have been verified experimentally for the first time. In particular, a 30 GHz cutoff frequency has been measured.

引用

页码：896 / 897

页数：2

共 7 条

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