Wideband 5 W Ka-Band GaAs Power Amplifier

被引：11

作者：

Hosseinzadeh, Navid ^{[1
]}

Medi, Ali ^{[1
]}

机构：

[1] Sharif Univ Technol, Dept Elect Engn, Tehran 113659363, Iran

来源：

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2016年 / 26卷 / 08期

关键词：

GaAs pHEMT; Ka-Band; monolithic microwave integrated circuit Circuit (MMIC); power amplifiers; power combining; wideband power amplifier; HIGH-EFFICIENCY;

D O I：

10.1109/LMWC.2016.2587834

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter presents a Ka-Band 0.1-mu m GaAs pHEMT Power Amplifier with broad bandwidth. The isolating backvia wall (IBVW) has been proposed to improve the stability and performance. Over the frequency band of 31-40 GHz, implemented PA delivers 5 W saturated output power, 28% maximum power added efficiency (PAE) and 20 dB maximum small-signal gain. The chip size of the PA is 11.9 mm(2). To the best of authors knowledge, the presented PA demonstrates widest bandwidth in Ka-band GaAs PAs while maintaining compact size.

引用

页码：622 / 624

页数：3

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