Surface photo-voltage effect on Cr/GaAs(100) studied by photoemission spectroscopy with the combination of synchrotron radiation and laser

The surface photo-voltage (SPV) effect and its temporal profile on a Cr/p-GaAs(100) surface were measured by core-level photoelectron spectroscopy with the combination of synchrotron radiation and laser. It was found that the SPV value at the Cr thickness of 0.05 and 0.1 nm is enhanced in comparison with the clean surface, while that at the Cr thickness larger than 0.2 nm is remarkably suppressed. The dependence on the Cr thickness can be interpreted in terms of the change in the band bending and the escape process, which are associated with the electronic structures induced by the Cr deposition. (C) 2011 American Institute of Physics. [doi:10.1063/1.3665214]