Pulsed laser deposition of NdNiO3 thin films

被引:26
作者
Kaur, D [1 ]
Jesudasan, J
Raychaudhuri, P
机构
[1] Indian Inst Technol, Dept Phys, Roorkee 247667, Uttar Pradesh, India
[2] Tata Inst Fundamental Res, Dept CMP & MS, Bombay 400005, Maharashtra, India
关键词
perovskite; thin films; resistivity transport;
D O I
10.1016/j.ssc.2005.06.015
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
We report the structural and transport properties of NdNiO3 thin films prepared via pulsed laser deposition over various substrates. The films were well textured and c-axis oriented with good crystalline properties. The electrical resistivity of the films undergoes a metal-insulator transition, depending on the deposition process. Well-defined first order metal-insulator phase transition (T-MI) was observed in the best quality films without high pressure processing. Various growth conditions such as substrate temperature, oxygen pressure and thickness were varied to see their influence on T-MI. Deposition temperature was found to have a great impact on the electrical and structural properties of these films. Further the films deposited on LaAlO3 substrate were found to be highly oriented with uniform grain size as observed from X-ray diffraction and atomic force microscopy, whereas those on Si substrate were polycrystalline, dense and randomly oriented. (C) 2005 Elsevier Ltd. All rights reserved.
引用
收藏
页码:369 / 374
页数:6
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