Electrical properties of chemical-solution-derived Bi3.54Nd0.46Ti3O12 ferroelectric thin films

被引：25

作者：

Wu, D ^{[1
]}

Xia, YD

Li, AD

Liu, ZG

Ming, NB

机构：

[1] Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China

[2] Nanjing Univ, Dept Mat Sci & Engn, Nanjing 210093, Peoples R China

来源：

JOURNAL OF APPLIED PHYSICS | 2003年 / 94卷 / 11期

关键词：

D O I：

10.1063/1.1622777

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Bi3.54Nd0.46Ti3O12 (BNdT) thin films were prepared on Pt/TiO2/SiO2/Si substrates by chemical solution deposition. X-ray diffraction measurement indicated the polycrystalline nature of these films. Ferroelectric, dielectric, and leakage current characteristics of Pt/BNdT/Pt capacitors were studied. The remanent polarization and coercive field were 8.5 muC/cm(2) and 47 kV/cm, respectively, at 5 V stimulative voltage. The relative permittivity and dissipation factor at 100 kHz were around 510 and below 0.02, respectively. Fatigue free behavior of BNdT thin films was confirmed by essentially constant polarizations during 100 kHz bipolar switching up to 1.4x10(10) switches. The dependence of leakage current on dc voltage suggested Schottky and Poole-Frenkel emission behavior below 100 kV/cm, followed by dielectric breakdown. (C) 2003 American Institute of Physics.

引用

页码：7376 / 7378

页数：3

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