Research of Tm (5.5 at %), Ho (0.55 at %):GdVO4 laser pumped by diode laser at 800 nm

被引：1
作者：
Ju, Y. L. [1 ]
He, H. D. [1 ]
Zhu, G. L. [1 ]
Yao, B. Q. [1 ]
Wang, Y. Z. [1 ]
机构：
[1] Harbin Inst Technol, Natl Key Lab Tunable Laser Technol, Harbin 150001, Peoples R China
来源：
LASER PHYSICS | 2011年 / 21卷 / 12期
关键词：
SINGLE-LONGITUDINAL-MODE; HIGH-POWER; CW; OPERATION; LENGTH;
D O I：
10.1134/S1054660X11210092
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
In this paper, we report a Tm (5.5 at %), Ho (0.55 at %):GdVO4 laser pumped by diode laser at 800 nm. To our best knowledge, it is the first time that the use of Tm (5.5 at %), Ho (0.55 at %):GdVO4 crystal among the similar experiments. We observed the influences of LD working temperature i.e. pump wavelength to 2 mu m laser conversion efficiency. In the conditions of the continuous wave and 10 kHz acousto-optic Q-switch, high efficiency output of 2.05 mu m laser was obtained. With the maximum pump power of 34.6, 13.9, and 13.6 W at 2.05 mu m laser output was achieved respectively. Single laser pulse width was 25.6 ns in 10 kHz acousto-optic Q-switched condition.
引用
收藏
页码：2036 / 2039
页数：4
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