ReRAM multi-level characteristics for analog computing

被引：0

作者：

Katagiri, Tetsuya ^{[1
]}

Morigaki, Kazuki ^{[1
]}

Yachida, Kenta ^{[1
]}

Kawanishi, Hidenori ^{[1
]}

Kimura, Mutsumi ^{[1
]}

机构：

[1] Ryukoku Univ, Otsu, Shiga 5202194, Japan

来源：

TWENTY-NINETH INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES: TFT TECHNOLOGIES AND FPD MATERIALS (AM-FPD 22) | 2022年

基金：

日本科学技术振兴机构;

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We were able to confirm the pulse-induced conductance change in resistive random access memory (ReRAM) with a-IGZO resistive layer and incorporated into 20x20 crossbars. The conductance was found to change from 24 to 34 mS. The conductance could be finely varied by the applied pulse. It is expected to be used for spiking neural network (SNN) synapses that require an analog conductance change due to pulses.

引用

页码：154 / 155

页数：2

共 6 条

[1] 3-D Memristor Crossbars for Analog and Neuromorphic Computing Applications
Adam, Gina C.
Hoskins, Brian D.
Prezioso, Mirko
Merrikh-Bayat, Farnood
Chakrabarti, Bhaswar
Strukov, Dmitri B.
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017, 64 (01) : 312 - 318
[2] Tuning the Performance of Pt/HfO2/Ti/Pt ReRAM Devices obtained from Plasma-Enhanced Atomic Layer Deposition for HfO2 Thin Films
Hardtdegen, A.
Zhang, H.
Hoffmann-Eifert, S.
[J]. ATOMIC LAYER DEPOSITION APPLICATIONS 12, 2016, 75 (06): : 177 - 184
[3] Nanoscale Memristor Device as Synapse in Neuromorphic Systems
Jo, Sung Hyun
Chang, Ting
Ebong, Idongesit
Bhadviya, Bhavitavya B.
Mazumder, Pinaki
Lu, Wei
[J]. NANO LETTERS, 2010, 10 (04) : 1297 - 1301
[4] Katagiri T., 2020, IEICE TECHNICAL REPO, V120, P21
[5] Artificial neuron operations and spike-timing-dependent plasticity using memristive devices for brain-inspired computing
Marukame, Takao
Nishi, Yoshifumi
Yasuda, Shin-ichi
Tanamoto, Tetsufumi
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 2018, 57 (04)
[6] Okazaki A., 2017, J ROBOTICS SOC JAPAN, V35, P209

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