New technique for fabrication of two-dimensional photonic bandgap crystals by selective epitaxy

被引：51

作者：

Hamano, T ^{[1
]}

Hirayama, H ^{[1
]}

Aoyagi, Y ^{[1
]}

机构：

[1] RIKEN,INST PHYS & CHEM RES,WAKO,SAITAMA 35101,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1997年 / 36卷 / 3A期

关键词：

photonic bandgap crystal; selective epitaxy; metalorganic vapor phase epitaxy; GaAs; spontaneous emission control;

D O I：

10.1143/JJAP.36.L286

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A two-dimensional (2D) photonic bandgap (PBG) crystal is formed from an array of either rods (pillars) or holes arranged in a periodic lattice. Use of selective epitaxy to fabricate a 2D PBG crystal provides the possibility of obtaining pillars with a high aspect ratio and facets free from surface damage. We have fabricated semiconductor 2D PBG crystals using selective metalorganic vapor phase epitaxy on (111)B GaAs for the first time. The fabricated crystals consist of hexagonal GaAs micropillars arranged in a triangular lattice of 490 nm pitch. Each micropillar has a high aspect ratio (> 10) and six smooth; steep sidewalls consisting of {(1) over bar 10} facets.

引用

页码：L286 / L288

页数：3

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