Demonstration of Constant-Gate-Charge Scaling to Increase the Robustness of Silicon Carbide Power MOSFETs

被引：6

作者：

Cooper, James A. ^{[1
]}

Morisette, Dallas T. ^{[2
,3
]}

Sampath, Madankumar ^{[2
,3
]}

Stellman, Cheryl A. ^{[4
]}

Bayne, Stephen B. ^{[4
]}

Westphal, Michael J. ^{[5
]}

Anderson, Clinton H. ^{[5
]}

Ransom, John A. ^{[5
]}

机构：

[1] Sonrisa Res Inc, Santa Fe, NM 87506 USA

[2] Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA

[3] Purdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA

[4] Texas Tech Univ, Dept Elect & Comp Engn, Lubbock, TX 79409 USA

[5] X FAB Texas, Lubbock, TX 79415 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2021年 / 68卷 / 09期

关键词：

Saturation current; specific ON-resistance; OXIDE RELIABILITY;

D O I：

10.1109/TED.2021.3099455

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We introduce the concept of constant-gate-charge scaling to increase the short-circuit withstand time of SiC power MOSFETs without increasing their ON-state resistance, gate charge, or oxide field. In gate-charge scaling, we scale the oxide thickness and gate drive voltage, keeping the oxide field constant. Short-circuit measurements on 1200 V SiC double-implanted MOSFETs (DMOSFETs) confirm that short-circuit withstand times can be increased by 2-4x increasing ON-resistance, simply by reducing the oxide thickness and the gate drive voltage.

引用

页码：4577 / 4581

页数：5

共 22 条

[1]

Agarwal Aditi, 2019, 2019 Device Research Conference (DRC), P237, DOI 10.1109/DRC46940.2019.9046447

[2]

Agarwal A, 2019, 2019 IEEE 7TH WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA 2019), P59, DOI [10.1109/WiPDA46397.2019.8998839, 10.1109/wipda46397.2019.8998839]

[3] Reliability of ultrathin gate oxides for ULSI devices [J].

Chang, CY ;

Chen, CC ;

Lin, HC ;

Liang, MS ;

Chien, CH ;

Huang, TY .

MICROELECTRONICS RELIABILITY, 1999, 39 (05) :553-566

[4]

Chowdhury Sauvik, 2018, Materials Science Forum, V924, P697, DOI 10.4028/www.scientific.net/MSF.924.697

[5] Effect of nitric oxide annealing on the interface trap densities near the band edges in the 4H polytype of silicon carbide [J].

Chung, GY ;

Tin, CC ;

Williams, JR ;

McDonald, K ;

Di Ventra, M ;

Pantelides, ST ;

Feldman, LC ;

Weller, RA .

APPLIED PHYSICS LETTERS, 2000, 76 (13) :1713-1715

[6]

Cooper J. A., 2018, Provisional Patent Appl., Patent No. 62684618

[7]

Cooper JM, 2018, PROC IEEE MICR ELECT, P1, DOI 10.1109/MEMSYS.2018.8346465

[8] SiC MOSFET Reliability Update [J].

Das, Mrinal K. ;

Haney, Sarah ;

Richmond, Jim ;

Olmedo, Anthony ;

Zhang, Jon ;

Ring, Zoltan .

SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2, 2012, 717-720 :1073-1076

[9] Ultra-thin oxide reliability: searching for the thickness scaling limit [J].

Degraeve, R ;

Kaczer, B ;

Groeseneken, G .

MICROELECTRONICS RELIABILITY, 2000, 40 (4-5) :697-701

[10]

Gaffar M. A., UNPUB

← 1 2 3 →