Oxygen vacancies induced room temperature ferromagnetism in hydrogenated Mn-doped ZnO

被引：62

作者：

Sharma, V. K. ^{[1
]}

Varma, G. D. ^{[1
]}

机构：

[1] Indian Inst Technol, Dept Phys, Roorkee 247667, Uttar Pradesh, India

来源：

JOURNAL OF APPLIED PHYSICS | 2007年 / 102卷 / 05期

关键词：

D O I：

10.1063/1.2778283

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report room temperature ferromagnetism (RTFM) in the hydrogenated bulk samples of Zn0.98Mn0.02O synthesized via standard solid state reaction route. The effect of hydrogenation time (t(H)) on the structural and magnetic properties of the samples has been explored. Magnetic measurements show that the samples synthesized by sintering in air at similar to 800 degrees C exhibit paramagnetic behavior and the same samples on annealing in a gaseous mixture of argon (90%) and hydrogen (10%) at similar to 800 degrees C become ferromagnetic at room temperature. Based on the structural and magnetic properties of the samples, it is argued that RTFM in the hydrogenated samples originates from the oxygen vacancies and some defects at Zn sites. (C) 2007 American Institute of Physics.

引用

页数：3

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