Three-dimensional Epitaxial Si1-xGex, Ge and SiC Crystals on Deeply Patterned Si Substrates

被引：14

作者：

von Kaenel, H. ^{[1
]}

Isa, F. ^{[1
,2
,3
]}

Falub, C. V. ^{[1
]}

Barthazy, E. J. ^{[4
]}

Mueller, E. ^{[4
]}

Chrastina, D. ^{[2
,3
]}

Isella, G. ^{[2
,3
]}

Kreiliger, T. ^{[1
]}

Taboada, A. G. ^{[1
]}

Meduna, M. ^{[5
,6
]}

Kaufmann, R. ^{[7
]}

Neels, A. ^{[7
]}

Dommann, A. ^{[7
]}

Niedermann, P. ^{[8
]}

Mancarella, F. ^{[9
]}

Mauceri, M. ^{[10
]}

Puglisi, M. ^{[10
]}

Crippa, D. ^{[11
]}

La Via, F. ^{[12
]}

Anzalone, R. ^{[12
]}

Piluso, N. ^{[12
]}

Bergamaschini, R. ^{[13
,14
]}

Marzegalli, A. ^{[13
,14
]}

Miglio, L. ^{[13
,14
]}

机构：

[1] ETH, Solid State Phys Lab, CH-8093 Zurich, Switzerland

[2] L NESS, I-22100 Como, Italy

[3] Politecn Milan, Dipartimento Fis, I-22100 Como, Italy

[4] ETH, Ctr Electron Microscopy, CH-8093 Zurich, Switzerland

[5] Masaryk Univ, Dept Cond Mat Phys, CS-61137 Brno, Czech Republic

[6] Masaryk Univ, CEITEC, CS-61137 Brno, Czech Republic

[7] Empa, Ctr Xray Analyt, CH-8600 Dubendorf, Switzerland

[8] Ctr Suisse Elect & Microtech SA, CH-2002 Neuchatel, Switzerland

[9] CNR IMM Bologna, I-40129 Bologna, Italy

[10] Epitaxial Technol Ctr Srl, I-95121 Catania, Italy

[11] LPE SpA, I-20021 Baranzate Di Bollate, MI, Italy

[12] CNR IMM, I-95121 Catania, Italy

[13] Univ Milano Bicocca, L NESS, I-20126 Milan, Italy

[14] Univ Milano Bicocca, Dept Mat Sci, I-20126 Milan, Italy

来源：

SIGE, GE, AND RELATED COMPOUNDS 6: MATERIALS, PROCESSING, AND DEVICES | 2014年 / 64卷 / 06期

关键词：

THREADING DISLOCATION DENSITIES; REDUCTION; GROWTH; DEFECTS; HETEROEPITAXY; ELIMINATION; MISFIT; LAYERS;

D O I：

10.1149/06406.0631ecst

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

We show that geometric shielding of the reactive flux in chemical vapor deposition by tall neighboring structures obtained by deep substrate patterning, along with short surface diffusion lengths, can provide nearly space filling arrays of high-quality epitaxial crystals despite large mismatches of lattice parameters and thermal expansion coefficients. The density of extended defects is strongly reduced by the method, and wafer bowing and crack formation largely inhibited. The concept is shown to be valid for SiGe/Si heterostructures ranging from pure Si to pure Ge both on Si(001) and Si(111) substrates. Here, dislocations are efficiently eliminated from three-dimensional faceted crystals with high-aspect ratios on top of micron-sized Si pillars. The application to 3C-SiC/Si(001) ridges, characterized by a lattice mismatch of nearly 20%, provides significantly lower stacking fault densities compared with layers grown on planar substrates.

引用

页码：631 / 648

页数：18

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