Resonant tunneling as a dominant transport mechanism in n-GaAs/p-GaAs tunnel diodes

被引：4

作者：

Jandieri, K. ^{[1
,2
]}

Baranovskii, S. D. ^{[1
,2
]}

Rubel, O. ^{[1
,2
]}

Stolz, W. ^{[1
,2
]}

Gebhard, F. ^{[1
,2
]}

Guter, W. ^{[3
]}

Hermle, M. ^{[3
]}

Bett, A. W. ^{[3
]}

机构：

[1] Philipps Univ Marburg, Dept Phys, D-35032 Marburg, Germany

[2] Philipps Univ Marburg, Ctr Mat Sci, D-35032 Marburg, Germany

[3] Fraunhofer Inst Solar Energy Syst, D-79110 Freiburg, Germany

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 24期

关键词：

D O I：

10.1063/1.2936932

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Current-voltage characteristics of Ga0.99In0.01As tunnel diodes are studied experimentally and theoretically. Three possible tunneling mechanisms are considered: direct band-to-band tunneling, phonon-assisted tunneling through defects, and resonant tunneling through defects. Comparison between theoretical results and experimental data reveals resonant tunneling through oxygen-related defects as the dominant transport mechanism at voltages corresponding to the peak current in diodes with doping level about 10(19) cm(-3). (c) 2008 American Institute of Physics.

引用

页数：3

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