Resonant tunneling as a dominant transport mechanism in n-GaAs/p-GaAs tunnel diodes

被引：4
作者：
Jandieri, K. [1 ,2 ]
Baranovskii, S. D. [1 ,2 ]
Rubel, O. [1 ,2 ]
Stolz, W. [1 ,2 ]
Gebhard, F. [1 ,2 ]
Guter, W. [3 ]
Hermle, M. [3 ]
Bett, A. W. [3 ]
机构：
[1] Philipps Univ Marburg, Dept Phys, D-35032 Marburg, Germany
[2] Philipps Univ Marburg, Ctr Mat Sci, D-35032 Marburg, Germany
[3] Fraunhofer Inst Solar Energy Syst, D-79110 Freiburg, Germany
来源：
APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 24期
关键词：
D O I：
10.1063/1.2936932
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Current-voltage characteristics of Ga0.99In0.01As tunnel diodes are studied experimentally and theoretically. Three possible tunneling mechanisms are considered: direct band-to-band tunneling, phonon-assisted tunneling through defects, and resonant tunneling through defects. Comparison between theoretical results and experimental data reveals resonant tunneling through oxygen-related defects as the dominant transport mechanism at voltages corresponding to the peak current in diodes with doping level about 10(19) cm(-3). (c) 2008 American Institute of Physics.
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页数：3
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