A 90nm CMOS MS/RF based foundry SOC technology comprising superb 185 GHz fT RFMOS and versatile, high-Q passive components for cost/performance optimization

被引：0

作者：

Chen, CH ^{[1
]}

Chang, CS ^{[1
]}

Chao, CP ^{[1
]}

Kuan, JF ^{[1
]}

Chang, CL ^{[1
]}

Wang, SH ^{[1
]}

Hsu, HM ^{[1
]}

Lien, WY ^{[1
]}

Tsai, YC ^{[1
]}

Lin, HC ^{[1
]}

Wu, CC ^{[1
]}

Huang, CF ^{[1
]}

Chen, SM ^{[1
]}

Tseng, PM ^{[1
]}

Chen, CW ^{[1
]}

Ku, CC ^{[1
]}

Lin, TY ^{[1
]}

Chang, CF ^{[1
]}

Lin, HJ ^{[1
]}

Tsai, MR ^{[1
]}

Chen, S ^{[1
]}

Chen, CF ^{[1
]}

Wei, MY ^{[1
]}

Wang, YJ ^{[1
]}

Lin, JCH ^{[1
]}

Chen, WM ^{[1
]}

Chang, CC ^{[1
]}

King, MC ^{[1
]}

Huang, CM ^{[1
]}

Lin, CT ^{[1
]}

Guo, JC ^{[1
]}

Chern, GJ ^{[1
]}

Tang, DD ^{[1
]}

Sun, JYC ^{[1
]}

机构：

[1] Taiwan Semicond Mfg Corp, Hsinchu 300, Taiwan

来源：

2003 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST | 2003年

关键词：

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

A versatile mixed-signal and RF (MS/RF) technology based on a foundry 90nm CMOS process was demonstrated with excellent MOS transistor f(T) at 160-185 GHz. Passive elements of various process schemes were fabricated for cost/performance evaluation. To realize low-cost system-on-chip (SOC), passive elements like 0.9um Cu inductors and metal-stacked capacitors (MOM) were implemented using standard logic back-end process. For high performance MS/RF solutions, inductors with 3 mum Cu and ultra thick 6 Pin Cu top metal were fabricated to achieve high quality factors, Q> 15 at iGHz and peak Q>20. Precision metal-sandwiched capacitors (MIM) with unit capacitances of 1.0, 1.5 and 2.0 fF/mum(2) were characterized and compared. Comparable or better matching was observed for MIM with higher unit capacitance, implying the possibility for chip size reduction. Specifically, the advantage of better MIM matching was demonstrated for the first time on the data resolution improvement of an A-to-D converter.

引用

页码：39 / 42

页数：4

共 2 条

[1] Low-K/Cu CMOS-based SoC technology with 115-GHz fT, 100-GHz fmax, noise 80-nm RF CMOS, high-Q MiM capacitor, and spiral Cu inductor
Guo, Jyh-Chyurn
IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, 2006, 19 (03) : 331 - 338
[2] High-Q on-chip inductors using thin-film wafer level packaging technology demonstrated on a 90nm RF-CMOS 5GHz VCO
Sun, X.
Linten, D.
Dupuis, O.
Carchon, G.
Soussan, P.
Decoutere, S.
De Raedt, W.
35TH EUROPEAN MICROWAVE CONFERENCE, VOLS 1-3, CONFERENCE PROCEEDINGS, 2005, : 77 - 80

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