A Switchable High-Sensitivity Photodetecting and Photovoltaic Device with Perovskite Absorber

被引：75

作者：

Chen, Hsin-Wei ^{[1
,3
]}

Sakai, Nobuya ^{[2
]}

Jena, Ajay Kumar ^{[1
]}

Sanehira, Yoshitaka ^{[1
]}

Ikegami, Masashi ^{[1
]}

Ho, Kuo-Chuan ^{[3
]}

Miyasaka, Tsutomu ^{[1
]}

机构：

[1] Toin Univ Yokohama, Grad Sch Engn, Aoba Ku, Yokohama, Kanagawa 2258503, Japan

[2] Univ Oxford, Dept Phys, Oxford OX1 3PU, England

[3] Natl Taiwan Univ, Dept Chem Engn, Taipei 10617, Taiwan

来源：

JOURNAL OF PHYSICAL CHEMISTRY LETTERS | 2015年 / 6卷 / 09期

基金：

日本科学技术振兴机构;

关键词：

TRANSPORT;

D O I：

10.1021/acs.jpclett.5b00723

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Amplified photocurrent gain has been obtained by photodiodes of inorganic semiconductors such as GaAs and Si. The avalanche photodiode, developed for high-sensitivity photo-detectors, requires an expensive vapor-phase epitaxy manufacture process and high driving voltage (50-150 V). Here, we show that a low-cost solution-processed device using a planar-structured ferroelectric organo-lead triiodide perovskite enables light detection in a large dynamic range of incident power (10(-7)-10(-1) W cm(-2)) by switching with small voltage (-0.9 to +0.5 V). The device achieves significantly high external quantum conversion efficiency (EQE) up to 2.4 x 10(5)% (gain value of 2400) under weak monochromatic light. On a single dual-functional device, incident small power (0.2-100 mu W cm(-2)) and medium to large power (>0.1 mW cm(-2)) are captured by reverse bias and forward bias modes, respectively, with linear responsivity of current. For weak light detection, the device works with a high responsivity value up to 620 A W-1.

引用

页码：1773 / 1779

页数：7

共 34 条

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