65nm SOICMOS SoC technology for low-power mmWave and RF platform

被引：0
|
作者：
Kim, Daeik D. [1 ]
Kim, Jonghae [1 ]
Cho, Choongyeun [1 ]
Plouchart, Jean-Olivier [2 ]
Trzcinski, Robert [2 ]
机构：
[1] IBM Corp, Semicond Res & Dev Ctr, Hopewell Jct, NY 12533 USA
[2] IBM Corp, Div Res, TJ Watson Res Ctr, Yorktown Hts, NY 10598 USA
来源：
2008 IEEE TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS, DIGEST OF PAPERS | 2008年
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D O I：
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An RF and mmWave platform developed in 65nm SOI CMOS technology is presented. The SOI FET performance in a wired cell is measured up to f(T)=300GHz and 200GHz for NFET and PFET. Ring oscillator records 3.6psec minimum inverter stage delay. Back-end-of-line Vertical Native Capacitor (VNCAP) and on-chip inductor performances are reported. The performance scaling trends of mmWave PLL front-end components are presented.
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页码：46 / +
页数：2
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