Physical properties of InN with the band gap energy of 1.1eV

被引：221

作者：

Inushima, T

Mamutin, VV

Vekshin, VA

Ivanov, SV

Sakon, T

Motokawa, M

Ohoya, S

机构：

[1] Tokai Univ, Dept Commun Engn, Hiratsuka, Kanagawa 2591292, Japan

[2] RAS, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

[3] Tohoku Univ, Inst Met Res, Sendai, Miyagi 9808577, Japan

[4] Kanagawa Ind Tech Res Inst, Ebina 2430422, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2001年 / 227卷

关键词：

characterization; molecular beam epitaxy; nitrides; semi-conducting indium compounds;

D O I：

10.1016/S0022-0248(01)00747-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We report the electrical and optical properties of undoped and Mg-doped InN grown by molecular beam epitaxy on sapphire (0 0 0 1) substrates. InN has a hexagonal structure and its c-axis is normal to the (0 0 0 1) sapphire surface. The Raman spectra show a strong E-2 (low) mode at 87 cm(-1). The band gap energies of the samples are much smaller than 1.9 eV. InN with the band gap energy less than 1.5 eV shows resistivity behavior anomaly below 2.5 K. The relation between the low temperature resistivity anomaly and the band gap energy of InN is discussed. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：481 / 485

页数：5

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