A new gate commutated turn-off thyristor and companion diode for high power applications

被引：0
|
作者：
Donlon, JF [1 ]
Motto, ER [1 ]
Yamamoto, M [1 ]
Lida, T [1 ]
机构：
[1] Powerex Inc, Youngwood, PA 15697 USA
来源：
CONFERENCE RECORD OF THE 1998 IEEE INDUSTRY APPLICATIONS CONFERENCE, VOLS 1-3 | 1998年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Conventional Gate Turn-Off (GTO) thyristors require costly dv/dt and di/dt snubber circuits as well as bulky gate drive circuits. Hard turn off in which all of the main current is commutated to the gate drive circuit with a turn-off gain of one has been rooked upon as a way to reduce the dv/dt limitations of the conventional GTO. The new Gate Commutated Turn-Off (GCT) Thyristor is optimized for this mode and is coupled with a low inductance gate drive circuit to greatly reduce the di/dt limitation and allow operation without a dv/dt snubber. A new soft recovery diode has been developed to provide the capability necessary to apply the superior characteristics of the new GCT in actual application.
引用
收藏
页码：873 / 880
页数：8
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