Bipolar resistive switching behavior of CaTiO3 films grown by hydrothermal epitaxy

被引：17

作者：

Lv, Fengzhen ^{[1
]}

Gao, Cunxu ^{[1
]}

Zhang, Peng ^{[1
]}

Dong, Chunhui ^{[1
]}

Zhang, Chao ^{[1
]}

Xue, Desheng ^{[1
]}

机构：

[1] Lanzhou Univ, Key Lab Magnetism & Magnet Mat, Minist Educ, Lanzhou 730000, Peoples R China

来源：

RSC ADVANCES | 2015年 / 5卷 / 51期

基金：

中国国家自然科学基金;

关键词：

THIN-FILMS; DOPED SRTIO3; RESISTANCE; MEMORIES;

D O I：

10.1039/c5ra02605a

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Epitaxial CaTiO3 films, with smooth and dense surface, were fabricated by the promising hydrothermal synthesis on the Nb:SrTiO3(001) substrate. The resulting coated substrates was used to prepare Pt/CaTiO3/Nb:SrTiO3 heterostructure devices. The devices present a bipolar resistive switching behavior. Both high and low resistance states have not obvious degradation within similar to 3 h and 1000 cycles measurements, which demonstrates the devices possess excellent retention and endurance characteristics. The resistive switching behavior of the devices can be explained by the trap-controlled space charge limited current conduction mechanism. Moreover, the modulation of the Pt/CaTiO3 Schottky-like barrier under an applied electric field is also responsible for the switching behavior, in the carrier injection-trapped/detrapped process.

引用

页码：40714 / 40718

页数：5

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