Excitonic properties of ZnS quantum wells

被引:16
|
作者
Urbaszek, B [1 ]
Townsley, CM
Tang, X
Morhain, C
Balocchi, A
Prior, KA
Nicholas, RJ
Cavenett, BC
机构
[1] Heriot Watt Univ, Dept Phys, Edinburgh EH14 4AS, Midlothian, Scotland
[2] Univ Oxford, Dept Phys, Clarendon Lab, Oxford OX1 3PU, England
来源
PHYSICAL REVIEW B | 2001年 / 64卷 / 15期
关键词
D O I
10.1103/PhysRevB.64.155321
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The excitonic properties of cubic ZnS quantum wells in ZnM-S are studied by reflectivity and magnetooptics. A remarkable improvement in the quality of the samples grown by molecular-beam epitaxy on GaP substrates has allowed the observation of heavy- and light-hole exciton transitions with values for the full width at half maximum as narrow as 5 meV. The 2s state of the heavy-hole exciton is identified and exciton binding energies of as high as 55 meV are deduced, indicating that for quantum wells narrower than 3.5 nm the exciton-LO phonon scattering can be suppressed. Zeeman splittings of the order of 10 meV for both the light- and heavy-hole exciton transitions appear in magnetoreflectivity spectra in magnetic fields up to 54 T. Large light-hole exciton g values of the order of 4 for all quantum wells are obtained due to the light hole being the uppermost valence band in these tensile-strained quantum wells. A strong reduction in the diamagnetic shifts for narrow wells is observed due to increasing quantum confinement.
引用
收藏
页数:6
相关论文
共 50 条
  • [21] Luminescence properties of dense excitonic systems in ZnSe-based quantum wells
    Fujimoto, M
    Shigematsu, H
    Senda, K
    Yamada, Y
    Taguchi, T
    Sasaki, F
    Kobayashi, S
    BLUE LASER AND LIGHT EMITTING DIODES II, 1998, : 250 - 253
  • [22] Excitonic properties of 1 monolayer ultra-thin quantum wells of CdSe
    Hernández-Calderón, I
    ADVANCED SUMMER SCHOOL IN PHYSICS 2005: FRONTIERS IN CONTEMPORARY PHYSICS, 2006, 809 : 343 - 347
  • [23] Excitonic trions in undoped GaAs quantum wells
    Cavendish Lab, Cambridge, United Kingdom
    Solid State Commun, 4 (287-291):
  • [24] Excitonic trions in undoped GaAs quantum wells
    Phillips, RT
    Nixon, GC
    Fujita, T
    Simmons, MY
    Ritchie, DA
    SOLID STATE COMMUNICATIONS, 1996, 98 (04) : 287 - 291
  • [25] Excitonic recombination dynamics in shallow quantum wells
    Tignon, J
    Heller, O
    Roussignol, P
    Martinez-Pastor, J
    Lelong, P
    Bastard, G
    Iotti, RC
    Andreani, LC
    Thierry-Mieg, V
    Planel, R
    PHYSICAL REVIEW B, 1998, 58 (11): : 7076 - 7085
  • [26] Excitonic states in the structures with shallow quantum wells
    Muljarov, EA
    Sibeldin, NN
    Skorikov, ML
    Tsvetkov, VA
    Etienne, B
    IZVESTIYA AKADEMII NAUK SERIYA FIZICHESKAYA, 2000, 64 (02): : 332 - 336
  • [27] Observation of excitonic transitions in InSb quantum wells
    Dai, N
    Brown, F
    Barsic, P
    Khodaparast, GA
    Doezema, RE
    Johnson, MB
    Chung, SJ
    Goldammer, KJ
    Santos, MB
    APPLIED PHYSICS LETTERS, 1998, 73 (08) : 1101 - 1103
  • [28] Optical properties of ZnS/ZnMgS strained-layer quantum wells
    Ichino, K
    Suzuki, N
    Kariya, H
    Ueyama, K
    Kitagawa, M
    Kobayashi, H
    JOURNAL OF CRYSTAL GROWTH, 2000, 214 : 368 - 372
  • [29] Excitonic susceptibility in near triangular quantum wells
    Anitha, A.
    Arulmozhi, M.
    INDIAN JOURNAL OF PHYSICS, 2017, 91 (03) : 287 - 292
  • [30] Excitonic susceptibility in near triangular quantum wells
    A. Anitha
    M. Arulmozhi
    Indian Journal of Physics, 2017, 91 : 287 - 292