Excitonic properties of ZnS quantum wells

被引:16
|
作者
Urbaszek, B [1 ]
Townsley, CM
Tang, X
Morhain, C
Balocchi, A
Prior, KA
Nicholas, RJ
Cavenett, BC
机构
[1] Heriot Watt Univ, Dept Phys, Edinburgh EH14 4AS, Midlothian, Scotland
[2] Univ Oxford, Dept Phys, Clarendon Lab, Oxford OX1 3PU, England
来源
PHYSICAL REVIEW B | 2001年 / 64卷 / 15期
关键词
D O I
10.1103/PhysRevB.64.155321
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The excitonic properties of cubic ZnS quantum wells in ZnM-S are studied by reflectivity and magnetooptics. A remarkable improvement in the quality of the samples grown by molecular-beam epitaxy on GaP substrates has allowed the observation of heavy- and light-hole exciton transitions with values for the full width at half maximum as narrow as 5 meV. The 2s state of the heavy-hole exciton is identified and exciton binding energies of as high as 55 meV are deduced, indicating that for quantum wells narrower than 3.5 nm the exciton-LO phonon scattering can be suppressed. Zeeman splittings of the order of 10 meV for both the light- and heavy-hole exciton transitions appear in magnetoreflectivity spectra in magnetic fields up to 54 T. Large light-hole exciton g values of the order of 4 for all quantum wells are obtained due to the light hole being the uppermost valence band in these tensile-strained quantum wells. A strong reduction in the diamagnetic shifts for narrow wells is observed due to increasing quantum confinement.
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页数:6
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