Fluorinated SrTiO3 as Charge-Trapping Layer for Nonvolatile Memory Applications

被引：17
|
作者：
Huang, X. D. [1 ]
Sin, Johnny K. O. [2 ]
Lai, P. T. [1 ]
机构：
[1] Univ Hong Kong, Dept Elect & Elect Engn, Hong Kong, Hong Kong, Peoples R China
[2] Hong Kong Univ Sci & Technol, Dept Elect & Elect Engn, Hong Kong, Hong Kong, Peoples R China
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2011年 / 58卷 / 12期
关键词：
Charge-trapping (CT) layer (CTL); fluorine treatment; high-k; nonvolatile memory; SrTiO3; FLASH MEMORY; DIELECTRICS; CAPACITORS; RETENTION; FILMS;
D O I：
10.1109/TED.2011.2169675
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Charge-trapping properties of SrTiO3 with and without fluorine incorporation are investigated by using an Al/Al2O3/SrTiO3/SiO2/Si structure. The memory device with a fluorinated SrTiO3 film shows promising performance in terms of large memory window (8.8 V) by +/-8-V sweeping voltage, large flatband-voltage (V-FB) shift (2.5 V) at a low gate voltage of +6 V for 1 ms, negligible V-FB shift after 10(5)-cycle program/erase stressing, and improved data retention compared with that without fluorine treatment. These advantages can be associated with generated deep-level traps, reduced leakage path, and enhanced strength of the film due to the fluorine incorporation.
引用
收藏
页码：4235 / 4240
页数：6
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