Formation of TiSi2 on nitrogen ion implanted (001)Si

被引：5

作者：

Cheng, SL ^{[1
]}

Chen, LJ

Tsui, BY

机构：

[1] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu, Taiwan

[2] Ind Technol & Res Inst, Elect Res & Serv Org, Hsinchu, Taiwan

来源：

JOURNAL OF MATERIALS RESEARCH | 1999年 / 14卷 / 01期

关键词：

D O I：

10.1557/JMR.1999.0032

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Formation of TiSi2 on nitrogen ion implanted (001)Si has been investigated. Nitrogen ion implantation was found to suppress the B and As diffusion in silicon. For Ti on 30 keV BF2+-20 keV N-2(+) and 30 keV As+-20 keV N-2(+) implanted samples, a continuous low-resistivity TiSi2 layer was found to form in all samples annealed at 700-900 degrees C, For Ti on 1 x 10(15)/cm(2) N-2(+)- and As+ implanted samples, end-of-range defects were completely eliminated in all samples annealed at 700-900 degrees C. The results indicated that with appropriate control, N+-implantation can be successfully implemented in forming low-resistivity TiSi2 contacts on shallow junctions in deep submicron devices.

引用

页码：213 / 221

页数：9

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