Optical characterization of the "E2" deep level in GaN

被引：18

作者：

Hacke, P

Ramvall, P

Tanaka, S

Aoyagi, Y

Kuramata, A

Horino, K

Munekata, H

机构：

[1] RIKEN, Inst Phys & Chem Res, Semicond Lab, Wako, Saitama 3510198, Japan

[2] Fujitsu Labs Ltd, Atsugi, Kanagawa 24301, Japan

[3] Tokyo Inst Technol, Yokohama, Kanagawa 226, Japan

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 04期

关键词：

D O I：

10.1063/1.123180

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The correspondence between the E2 level (similar to E-c-0.55 eV) in n-type GaN undergoing thermoionization and photoionization was established. The optical cross section in the vicinity of the threshold for photoionization of this level was measured by means of capacitance transient spectroscopy. Analysis using the formulation of Chantre yielded the optical activation energy, E-0=0.85 eV, and the Franck-Condon parameter, d(FC)=0.30 eV at 90 K. (C) 1999 American Institute of Physics. [S0003-6951(99)03004-1].

引用

页码：543 / 545

页数：3

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