Certified ion implantation fluence by high accuracy RBS

被引:18
作者
Colaux, Julien L. [1 ]
Jeynes, Chris [1 ]
Heasman, Keith C. [1 ]
Gwilliam, Russell M. [1 ]
机构
[1] Univ Surrey, Ion Beam Ctr, Guildford GU2 7XH, Surrey, England
基金
英国工程与自然科学研究理事会;
关键词
SUPERCONDUCTING MGB2; ANNEALING ANALYSIS; SILICON; CALIBRATION; CERTIFICATION; SPECTROMETRY; SCATTERING;
D O I
10.1039/c4an02316a
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
From measurements over the last two years we have demonstrated that the charge collection system based on Faraday cups can robustly give near-1% absolute implantation fluence accuracy for our electrostatically scanned 200 kV Danfysik ion implanter, using four-point-probe mapping with a demonstrated accuracy of 2%, and accurate Rutherford backscattering spectrometry (RBS) of test implants from our quality assurance programme. The RBS is traceable to the certified reference material IRMM-ERM-EG001/BAM-L001, and involves convenient calibrations both of the electronic gain of the spectrometry system (at about 0.1% accuracy) and of the RBS beam energy (at 0.06% accuracy). We demonstrate that accurate RBS is a definitive method to determine quantity of material. It is therefore useful for certifying high quality reference standards, and is also extensible to other kinds of samples such as thin self-supporting films of pure elements. The more powerful technique of Total-IBA may inherit the accuracy of RBS.
引用
收藏
页码:3251 / 3261
页数:11
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