Optic phonons and anisotropic thermal conductivity in hexagonal Ge2Sb2Te5

被引:52
作者
Mukhopadhyay, Saikat [1 ]
Lindsay, Lucas [1 ]
Singh, David J. [2 ]
机构
[1] Oak Ridge Natl Lab, Mat Sci & Technol Div, Oak Ridge, TN 37831 USA
[2] Univ Missouri, Dept Phys & Astron, Columbia, MO 65211 USA
关键词
TOTAL-ENERGY CALCULATIONS; MEMORY;
D O I
10.1038/srep37076
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
The lattice thermal conductivity (kappa) of hexagonal Ge2Sb2Te5 (h-GST) is studied via direct first-principles calculations. We find significant intrinsic anisotropy (kappa(a)/kappa(c)similar to 2) of. in bulk h-GST, with the dominant contribution to. from optic phonons, similar to 75%. This is extremely unusual as the acoustic phonon modes are the majority heat carriers in typical semiconductors and insulators. The anisotropy derives from varying bonding along different crystal directions, specifically from weak interlayer bonding along the c-axis, which gives anisotropic phonon dispersions. The phonon spectrum of h-GST has very dispersive optic branches with higher group velocities along the a-axis as compared to flat optic bands along the c-axis. The large optic mode contributions to the thermal conductivity in low-kappa. h-GST is unusual, and development of fundamental physical understanding of these contributions may be critical to better understanding of thermal conduction in other complex layered materials.
引用
收藏
页数:8
相关论文
共 39 条
[1]   Thermal characterization of the SiO2-Ge2Sb2Te5 interface from room temperature up to 400 °C [J].
Battaglia, J. -L. ;
Kusiak, A. ;
Schick, V. ;
Cappella, A. ;
Wiemer, C. ;
Longo, M. ;
Varesi, E. .
JOURNAL OF APPLIED PHYSICS, 2010, 107 (04)
[2]   Phonon dispersion effects and the thermal conductivity reduction in GaAs/AlAs superlattices [J].
Bies, WE ;
Radtke, RJ ;
Ehrenreich, H .
JOURNAL OF APPLIED PHYSICS, 2000, 88 (03) :1498-1503
[3]   IMPROVED TETRAHEDRON METHOD FOR BRILLOUIN-ZONE INTEGRATIONS [J].
BLOCHL, PE ;
JEPSEN, O ;
ANDERSEN, OK .
PHYSICAL REVIEW B, 1994, 49 (23) :16223-16233
[4]   Nanoscale thermal transport [J].
Cahill, DG ;
Ford, WK ;
Goodson, KE ;
Mahan, GD ;
Majumdar, A ;
Maris, HJ ;
Merlin, R ;
Phillpot, SR .
JOURNAL OF APPLIED PHYSICS, 2003, 93 (02) :793-818
[5]   Twisting phonons in complex crystals with quasi-one-dimensional substructures [J].
Chen, Xi ;
Weathers, Annie ;
Carrete, Jesus ;
Mukhopadhyay, Saikat ;
Delaire, Olivier ;
Stewart, Derek A. ;
Mingo, Natalio ;
Girard, Steven N. ;
Ma, Jie ;
Abernathy, Douglas L. ;
Yan, Jiaqiang ;
Sheshka, Raman ;
Sellan, Daniel P. ;
Meng, Fei ;
Jin, Song ;
Zhou, Jianshi ;
Shi, Li .
NATURE COMMUNICATIONS, 2015, 6
[6]   Lower limit to the lattice thermal conductivity of nanostructured Bi2Te3-based materials [J].
Chiritescu, Catalin ;
Mortensen, Clay ;
Cahill, David G. ;
Johnson, David ;
Zschack, Paul .
JOURNAL OF APPLIED PHYSICS, 2009, 106 (07)
[7]  
Choi M, 2006, J KOREAN PHYS SOC, V49, pS481
[8]   Thermal and Electrical Characterization of Materials for Phase-Change Memory Cells [J].
Fallica, Roberto ;
Battaglia, Jean-Luc ;
Cocco, Simone ;
Monguzzi, Cristiano ;
Teren, Andrew ;
Wiemer, Claudia ;
Varesi, Enrico ;
Cecchini, Raimondo ;
Gotti, Andrea ;
Fanciulli, Marco .
JOURNAL OF CHEMICAL AND ENGINEERING DATA, 2009, 54 (06) :1698-1701
[9]   Thermal characterization and analysis of phase change random access memory [J].
Giraud, V ;
Cluzel, J ;
Sousa, V ;
Jacquot, A ;
Dauscher, A ;
Lenoir, B ;
Scherrer, H ;
Romer, S .
JOURNAL OF APPLIED PHYSICS, 2005, 98 (01)
[10]   Thermal boundary resistance at Ge2Sb2Te5/ZnS:SiO2 interface [J].
Kim, EK ;
Kwun, SI ;
Lee, SM ;
Seo, H ;
Yoon, JG .
APPLIED PHYSICS LETTERS, 2000, 76 (26) :3864-3866