Power amplifier performance and modelling of one-emitter-finger GaAlAs/GaAs heterojunction bipolar transistor

被引：1

作者：

Andrieux, L

Cazarre, A

Bailbe, JP

Marty, A

机构：

[1] Laboratoire d'Analyse et d'Architecture des Systèmes du CNRS, 31077 Toulouse Cedex, 7, avenue du Colonel Roche

来源：

IEE PROCEEDINGS-CIRCUITS DEVICES AND SYSTEMS | 1996年 / 143卷 / 06期

关键词：

heterojunction bipolar transistors; GaAlAs/GaAs; self-heating effects; power amplification;

D O I：

10.1049/ip-cds:19960568

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A physically based, large-signal HBT model is presented accounting for self-heating effects by way of a thermal circuit representing the thermal resistance of the power device. The model is validated by comparison with the experimental DC characteristics, S parameter measurements under small-signal operation and output power measurements at 2GHz under large-signal operation. The authors focus on the HBT frequency performance being measured using both probes and bond pads.

引用

页码：352 / 356

页数：5

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