Vanishing quasiparticle density in a hybrid Al/Cu/Al single-electron transistor

被引:78
作者
Saira, O-P [1 ]
Kemppinen, A. [2 ]
Maisi, V. F. [2 ]
Pekola, J. P. [1 ]
机构
[1] Aalto Univ, Low Temp Lab, FI-00076 Aalto, Finland
[2] Ctr Metrol & Accreditat MIKES, FI-02151 Espoo, Finland
来源
PHYSICAL REVIEW B | 2012年 / 85卷 / 01期
基金
芬兰科学院;
关键词
DEVICES;
D O I
10.1103/PhysRevB.85.012504
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The achievable fidelity of many nanoelectronic devices based on superconducting aluminum is limited by either the density of residual nonequilibrium quasiparticles n(qp) or the density of quasiparticle states in the gap, characterized by Dynes parameter gamma. We infer upper bounds n(qp) < 0.033 mu m(-3) and gamma < 1.6 x 10(-7) from transport measurements performed on Al/Cu/Al single-electron transistors, improving previous results by an order of magnitude. Owing to efficient microwave shielding and quasiparticle relaxation, a typical number of quasiparticles in the superconducting leads is zero.
引用
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页数:4
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