Low-Frequency Noise in Bridged-Grain Polycrystalline Silicon Thin-Film Transistors

被引：7

作者：

Yang, Yuyang ^{[1
]}

Zhang, Meng ^{[1
]}

Lu, Lei ^{[2
]}

Wong, Man ^{[3
]}

Kwok, Hoi-Sing ^{[3
]}

机构：

[1] Shenzhen Univ, Coll Elect & Informat Engn, Shenzhen 518060, Peoples R China

[2] Peking Univ, Sch Elect & Comp Engn, Shenzhen 518055, Peoples R China

[3] Hong Kong Univ Sci & Technol, State Key Lab Adv Displays & Optoelect Technol, Hong Kong, Peoples R China

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2022年 / 69卷 / 04期

基金：

中国国家自然科学基金;

关键词：

Thin film transistors; Silicon; Logic gates; 1; f noise; Scattering; Resists; Performance evaluation; f noise theory; bridged-grain (BG); low-frequency noise (LFN); polycrystalline silicon; thin-film transistors (TFTs); STRESS-INDUCED DEGRADATION; POLY-SI TFTS; SYNCHRONIZED-STRESS; REDUCTION; BORON;

D O I：

10.1109/TED.2022.3148697

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, low-frequency noise (LFN) of bridged-grain (BG) polycrystalline silicon thin-film transistors (TFTs) is characterized and studied for the first time. The noise power spectral density (PSD) of drain current follows the classical 1/f noise theory. The carrier number with the correlated mobility fluctuation model dominates the device 1/f noise. Compared with normal TFTs, BG TFTs show a much smaller level of LFN, which is mainly attributed to grain boundary (GB) barrier lowering and trap density reduction.

引用

页码：1984 / 1988

页数：5

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