Modification of electronic band structure in mL plus nL (m=1, 2; n=1-5) free-stacking graphene

被引：1

作者：

Ji, Jianting ^{[1
]}

He, Rui ^{[2
]}

Jie, Yinghao ^{[1
]}

Zhang, Anmin ^{[1
]}

Ma, Xiaoli ^{[1
]}

Pan, Linjing ^{[1
]}

Wang, Le ^{[1
]}

Zhang, Liyuan ^{[1
]}

Zhang, Qing-Ming ^{[1
]}

机构：

[1] Renmin Univ China, Beijing Key Lab Optoelect Funct Mat & Micronano D, Dept Phys, Beijing 100872, Peoples R China

[2] Univ Northern Iowa, Dept Phys, Cedar Falls, IA 50614 USA

来源：

APPLIED PHYSICS LETTERS | 2016年 / 109卷 / 15期

基金：

美国国家科学基金会;

关键词：

TWISTED BILAYER GRAPHENE; CHEMICAL-VAPOR-DEPOSITION; RAMAN-SPECTROSCOPY; DEFECTS; MODES;

D O I：

10.1063/1.4964706

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this paper, we studied stacked mL + nL graphene layers using Raman scattering spectroscopy. Our results indicate that the 2D band from stacked graphene can be considered as a superposition of those from the constituent nL and mL graphene layers, and a blueshift in the 2D band is observed when n or m = 1. The blueshift increases with the number of stacked layers and can be well understood by the reduction of Fermi velocity in the single layer graphene, as studied in the 1L + 1L (or twisted bilayer) case. As the number of stacked layers changes from 1 to 5, the Fermi velocity in the single layer graphene reduces to about 85% of its initial value. This study shows a convenient way to realize the modification of the Fermi velocity in free-stacking graphene and is of significance to the applications of graphene-based heterostructures. Published by AIP Publishing.

引用

页数：4

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