The crystallization behavior of stoichiometric and off-stoichiometric Ga-Sb-Te materials for phase-change memory

被引：44

作者：

Cheng, Huai-Yu ^{[1
]}

Raoux, Simone ^{[2
]}

Jordan-Sweet, Jean L.

机构：

[1] Macronix Int Co Ltd, Macronix Emerging Cent Lab, IBM Macronix PCRAM Joint Project, Hsinchu, Taiwan

[2] IBM TJ Watson Res Ctr, IBM Macronix PCRAM Joint Project, Yorktown Hts, NY 10598 USA

来源：

APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 12期

关键词：

FILMS;

D O I：

10.1063/1.3570636

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The stoichiometric Ga(4)Sb(6)Te(3) and Ga-Sb materials were systemically studied. The alloy Ga(4)Sb(6)Te(3) shows a fast crystallization speed, very high crystallization temperature, T(x), and high electrical contrast. Although stoichiometric GaSb has similar performance and even faster crystallization speed, the electrical contrast is much lower. The other off-stoichiometric compounds we studied all have higher T(x) than Ge(2)Sb(2)Te(5) indicating a good amorphous stability. By raising the Sb/Te ratio with GaSb incorporation, T(x) and the recrystallization time of melt-quenched, amorphous samples can be effectively increased. The stoichiometric Ga(4)Sb(6)Te(3) with less likelihood of phase-segregation compared to nonstoichiometric compounds is a promising candidate for phase-change memory. (C) 2011 American Institute of Physics. [doi:10.1063/1.3570636]

引用

页数：3

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