Influence of Substrate Temperature and Post-Deposition Annealing on Material Properties of Ga-Doped ZnO Prepared by Pulsed Laser Deposition

被引：6

作者：

Scott, Robin C. ^{[1
]}

Leedy, Kevin D. ^{[4
]}

Bayraktaroglu, Burhan ^{[4
]}

Look, David C. ^{[5
]}

Smith, David J. ^{[3
]}

Ding, Ding ^{[2
]}

Lu, Xianfeng ^{[2
]}

Zhang, Yong-Hang ^{[2
]}

机构：

[1] Arizona State Univ, Sch Mech Aerosp Chem & Mat Engn, Tempe, AZ 85287 USA

[2] Arizona State Univ, Sch Elect Comp & Energy Engn, Tempe, AZ 85287 USA

[3] Arizona State Univ, Dept Phys, Tempe, AZ 85287 USA

[4] USAF, Res Lab, Wright Patterson AFB, OH 45433 USA

[5] Wright State Univ, Semicond Res Ctr, Dayton, OH 45435 USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2011年 / 40卷 / 04期

基金：

美国国家科学基金会;

关键词：

Transparent conductive oxide; pulsed laser deposition; Ga-doped ZnO; solar cells; optoelectronics; OXIDE THIN-FILMS; N-TYPE ZNO; OPTICAL-PROPERTIES; ELECTRICAL-PROPERTIES; CONDUCTING ZNO; TRANSPARENT; AL; PLASMA; RF; ABSORPTION;

D O I：

10.1007/s11664-010-1396-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ga-doped ZnO films were prepared at 10 mTorr of oxygen over a broad temperature range using pulsed laser deposition. The carrier concentration of as-deposited films decreased monotonically with deposition temperature over a temperature range of 25A degrees C to 450A degrees C. Post-deposition annealing of as-deposited films in forming gas (5% H-2 in argon) or vacuum resulted in a substantial increase in both carrier concentration and electron mobility. The figure of merit was highest for films deposited at 250A degrees C then annealed in forming gas at 400A degrees C. The optical transmittance was near 90% throughout the visible and near-infrared spectral regions. These results indicate that Ga-doped ZnO is a viable alternative to transparent indium-based conductive oxides.

引用

页码：419 / 428

页数：10

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