Electric and antiferromagnetic chiral textures at multiferroic domain walls

被引:82
作者
Chauleau, J. -Y. [1 ,2 ]
Chirac, T. [1 ]
Fusil, S. [3 ,4 ]
Garcia, V. [3 ]
Akhtar, W. [5 ,6 ]
Tranchida, J. [7 ,10 ]
Thibaudeau, P. [7 ]
Gross, I. [5 ,6 ]
Blouzon, C. [1 ]
Finco, A. [5 ,6 ]
Bibes, M. [3 ]
Dkhil, B. [8 ]
Khalyavin, D. D. [9 ]
Manuel, P. [9 ]
Jacques, V. [5 ,6 ]
Jaouen, N. [2 ]
Viret, M. [1 ]
机构
[1] Univ Paris Saclay, CNRS, CEA, SPEC, Gif Sur Yvette, France
[2] Synchrotron SOLEIL, Gif Sur Yvette, France
[3] Univ Paris Saclay, Univ Paris Sud, CNRS, Thales,Unite Mixte Phys, Palaiseau, France
[4] Univ Paris Saclay, Univ Evry, Evry, France
[5] Univ Montpellier, Lab Charles Coulomb, Montpellier, France
[6] CNRS, Montpellier, France
[7] CEA, DAM Ripault, Monts, France
[8] Univ Paris Saclay, Cent Supelec, Lab Struct Proprietes & Modelisat Solides, Gif Sur Yvette, France
[9] Rutherford Appleton Lab, ISIS Facil, STFC, Didcot, Oxon, England
[10] Sandia Natl Labs, Multiscale Sci Dept, POB 5800, Albuquerque, NM 87185 USA
基金
欧盟地平线“2020”; 欧洲研究理事会;
关键词
SCATTERING; DYNAMICS;
D O I
10.1038/s41563-019-0516-z
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Chiral electric and magnetic structures are observed at domain walls in thin films of the room-temperature multiferroic BiFeO3. Chirality, a foundational concept throughout science, may arise at ferromagnetic domain walls(1) and in related objects such as skyrmions(2). However, chiral textures should also exist in other types of ferroic materials, such as antiferromagnets, for which theory predicts that they should move faster for lower power(3), and ferroelectrics, where they should be extremely small and possess unusual topologies(4,5). Here, we report the concomitant observation of antiferromagnetic and electric chiral textures at domain walls in the room-temperature ferroelectric antiferromagnet BiFeO3. Combining reciprocal and real-space characterization techniques, we reveal the presence of periodic chiral antiferromagnetic objects along the domain walls as well as a priori energetically unfavourable chiral ferroelectric domain walls. We discuss the mechanisms underlying their formation and their relevance for electrically controlled topological oxide electronics and spintronics.
引用
收藏
页码:386 / +
页数:7
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