A light-stimulated synaptic transistor with synaptic plasticity and memory functions based on InGaZnOx-Al2O3 thin film structure

被引：173

作者：

Li, H. K. ^{[1
]}

Chen, T. P. ^{[1
]}

Liu, P. ^{[1
]}

Hu, S. G. ^{[1
,2
]}

Liu, Y. ^{[2
]}

Zhang, Q. ^{[1
]}

Lee, P. S. ^{[3
]}

机构：

[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore

[2] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Sichuan, Peoples R China

[3] Nanyang Technol Univ, Sch Mat Sci & Engn, Singapore 639798, Singapore

来源：

JOURNAL OF APPLIED PHYSICS | 2016年 / 119卷 / 24期

基金：

新加坡国家研究基金会;

关键词：

INSTABILITY; DEVICE;

D O I：

10.1063/1.4955042

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this work, a synaptic transistor based on the indium gallium zinc oxide (IGZO) aluminum oxide (Al2O3) thin film structure, which uses ultraviolet (UV) light pulses as the pre-synaptic stimulus, has been demonstrated. The synaptic transistor exhibits the behavior of synaptic plasticity like the paired-pulse facilitation. In addition, it also shows the brain's memory behaviors including the transition from short-term memory to long-term memory and the Ebbinghaus forgetting curve. The synapse-like behavior and memory behaviors of the transistor are due to the trapping and detrapping processes of the holes, which arc generated by the UV pulses, at the IGZO/A1,03 interface and/or in the Al2O3 layer. Published by A/P Publishing.

引用

页数：5

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