A Reliable Short-Circuit Protection Method with Ultra-Fast Detection for GaN based Gate Injection Transistors

被引：0

作者：

Wang, Ke ^{[1
]}

Abdullah, Yousef M. ^{[1
]}

Li, Xiao ^{[1
]}

Xing, Diang ^{[1
]}

Wang, Jin ^{[1
]}

Liu, Liming ^{[2
]}

Bala, Sandeep ^{[2
]}

机构：

[1] Ohio State Univ, Ctr High Performance Power Elect, Columbus, OH 43210 USA

[2] ABB Corp Res, Raleigh, NC USA

来源：

2019 IEEE 7TH WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA 2019) | 2019年

关键词：

GaN GIT; short-circuit capability; short-circuit fault; protection;

D O I：

10.1109/wipda46397.2019.8998869

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a new short-circuit protection method developed for Gallium Nitride (GaN) gate injection transistors (GITs). The proposed protection method is based on ultra-fast detection of the voltage dip on the phase leg of the converter, active current clamping of the gate drive, and fault confirmation with a low pass filter based de-saturation fault detection. Thus, it achieves an ultra-fast reaction and reliable protection for GaN GIT devices. The proposed protection method was experimentally validated with a 600 V rated commercial GaN GIT under single and repetitive short-circuit operations at 400 V. The total short-circuit fault response time was recorded within 224 ns, and the short-circuit energy is reduced with the ultra-fast detection and the active gate current clamping.

引用

页码：43 / 46

页数：4

共 17 条

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