Mechanisms of surface conductivity in thin film diamond: Application to high performance devices

被引：0
作者：
Looi, HJ
Pang, LYS
Molloy, AB
Jones, F
Whitfield, MD
Foord, JS
Jackman, RB
机构：
[1] UCL, London WC1E 7JE, England
[2] Univ Oxford, Phys & Theoret Chem Lab, Oxford OX1 3QZ, England
来源：
CARBON | 1999年 / 37卷 / 05期
关键词：
diamond; electronic properties;
D O I：
暂无
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
It has been known for some time that hydrogen within the bulk of diamond increases the conductivity of the material. However, only recently did it become apparent that the surface of thin film diamond can display p-type conductivity and that this too related to the presence of hydrogen. The origin of this effect has been controversial. We have used a wide range of techniques to study hydrogenated polycrystalline CVD diamond films to solve this problem. The generation of near surface carriers by hydrogen, which resides within the top 20 nm of 'as-grown' CVD films, is the origin of the conductivity rather than surface band bending which had also been proposed. Up to 10(19) holes cm(-3) can be measured and mobilities as high as 70 cm(2)/Vs recorded. H-termination of the surface is important for the formation of high quality metal-diamond interfaces. (C) 1999 Elsevier Science Ltd. All rights reserved.
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收藏
页码：801 / 805
页数：5
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