A Co-Design Approach to Understanding the Impact of Ultra-Wide-Bandgap Semiconductor Material Properties on Power Device Performance

被引：2

作者：

Kaplar, R. ^{[1
]}

Goodnick, S. ^{[2
]}

Shoemaker, J. ^{[2
]}

Vatan, R. ^{[2
]}

Flicker, J. ^{[1
]}

Binder, A. ^{[1
]}

Chowdhury, S. ^{[3
]}

机构：

[1] Sandia Natl Labs, POB 5800, Albuquerque, NM 87185 USA

[2] Arizona State Univ, Tempe, AZ 85287 USA

[3] Stanford Univ, Stanford, CA 94305 USA

来源：

6TH IEEE ELECTRON DEVICES TECHNOLOGY AND MANUFACTURING CONFERENCE (EDTM 2022) | 2022年

关键词：

Ultra-Wide-Bandgap semiconductor; Figure of Merit; power device; avalanche breakdown; low-field transport; HIGH-VOLTAGE; SILICON; DONORS;

D O I：

10.1109/EDTM53872.2022.9798255

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ultra-Wide-Bandgap semiconductors hold great promise for future power conversion applications. Figures of Merit (FOMs) are often used as a first means to understand the impact of semiconductor material parameters on power semiconductor performance, and in particular the Unipolar (or Baliga) FOM is often cited for this purpose. However, several factors of importance for Ultra-Wide-Bandgap semiconductors are not considered in the standard treatment of this FOM. For example, the Critical Field approximation has many shortcomings, and alternative transport mechanisms and incomplete dopant ionization are typically neglected. This paper presents the results of a study aimed at incorporating some of these effects into more realistic FOM calculations.

引用

页码：116 / 118

页数：3

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