Band structure calculations of CuAlO2, CuGaO2, CuInO2, and CuCrO2 by screened exchange

被引:100
作者
Gillen, Roland [1 ]
Robertson, John [1 ]
机构
[1] Univ Cambridge, Dept Engn, Cambridge CB3 0FA, England
关键词
AMORPHOUS OXIDE SEMICONDUCTORS; THIN-FILMS; OPTOELECTRONIC PROPERTIES; ELECTRICAL-CONDUCTION; ELECTRONIC-STRUCTURE; TRANSPARENT;
D O I
10.1103/PhysRevB.84.035125
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We report density functional theory band structure calculations on the transparent conducting oxides CuAlO2, CuGaO2, CuInO2, and CuCrO2. The use of the hybrid functional screened-exchange local density approximation (sX-LDA) leads to considerably improved electronic properties compared to standard LDA and generalized gradient approximation (GGA) approaches. We show that the resulting electronic band gaps compare well with experimental values and previous quasiparticle calculations, and show the correct trends with respect to the atomic number of the cation (Al, Ga, In). The resulting energetic depths of Cu d and O p levels and the valence-band widths are considerable improvements compared to LDA and GGA and are in good agreement with available x-ray photoelectron spectroscopy data. Lastly, we show the calculated imaginary part of the dielectric function for all four systems.
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页数:7
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