Role of mechanical stress in the resistance drift of Ge2Sb2Te5 films and phase change memories

被引：43

作者：

Rizzi, M. ^{[1
,2
]}

Spessot, A. ^{[3
]}

Fantini, P. ^{[3
]}

Ielmini, D. ^{[1
,2
]}

机构：

[1] Politecn Milan, Dipartimento Elettr & Informaz, I-20133 Milan, Italy

[2] IUNET, I-20133 Milan, Italy

[3] Micron, Agrate Brianza Mb, Italy

来源：

APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 22期

关键词：

antimony compounds; germanium compounds; IV-VI semiconductors; phase change materials; phase change memories; semiconductor devices; semiconductor thin films; AMORPHOUS-SILICON; STRUCTURAL RELAXATION; CRYSTALLIZATION; SI;

D O I：

10.1063/1.3664631

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In a phase change memory (PCM), the device resistance increases slowly with time after the formation of the amorphous phase, thus affecting the stability of stored data. This work investigates the resistance drift in thin films of amorphous Ge2Sb2Te5 and in PCMs, demonstrating a common kinetic of drift in stressed/unstressed films and in the nanometer-size active volume of a PCM with different stress levels developed via stressor layers. It is concluded that stress is not the root cause of PCM drift, which is instead attributed to intrinsic structural relaxation due to the disordered, metastable nature of the amorphous chalcogenide phase. (C) 2011 American Institute of Physics. [doi:10.1063/1.3664631]

引用

页数：3

共 22 条

[1] Physical origin of the resistance drift exponent in amorphous phase change materials [J].

Boniardi, Mattia ;

Ielmini, Daniele .

APPLIED PHYSICS LETTERS, 2011, 98 (24)

[2] Dependence of resistance drift on the amorphous cap size in phase change memory arrays [J].

Braga, Stefania ;

Cabrini, Alessandro ;

Torelli, Guido .

APPLIED PHYSICS LETTERS, 2009, 94 (09)

[3] GENERATION OF DANGLING BONDS BY HIGH-TEMPERATURE ANNEALING AND HOPPING CONDUCTION IN AMORPHOUS-SILICON FILMS [J].

CHIK, KP ;

FENG, SY ;

POON, SK .

SOLID STATE COMMUNICATIONS, 1980, 33 (10) :1019-1023

[4] Reduction in defect density by annealing in hydrogenated tetrahedral amorphous carbon [J].

Conway, NMJ ;

Ilie, A ;

Robertson, J ;

Milne, WI ;

Tagliaferro, A .

APPLIED PHYSICS LETTERS, 1998, 73 (17) :2456-2458

[5] CALORIMETRIC STUDIES OF CRYSTALLIZATION AND RELAXATION OF AMORPHOUS SI AND GE PREPARED BY ION-IMPLANTATION [J].

DONOVAN, EP ;

SPAEPEN, F ;

TURNBULL, D ;

POATE, JM ;

JACOBSON, DC .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (06) :1795-1804

[6] Recovery and drift dynamics of resistance and threshold voltages in phase-change memories [J].

Ielmini, Daniele ;

Lacaita, Andrea L. ;

Mantegazza, Davide .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2007, 54 (02) :308-315

[7] Reliability Impact of Chalcogenide-Structure Relaxation in Phase-Change Memory (PCM) Cells-Part I: Experimental Study [J].

Ielmini, Daniele ;

Sharma, Deepak ;

Lavizzari, Simone ;

Lacaita, Andrea L. .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2009, 56 (05) :1070-1077

[8] Effects of pressure on atomic and electronic structure and crystallization dynamics of amorphous Ge2Sb2Te5 [J].

Im, Jino ;

Cho, Eunae ;

Kim, Dohyung ;

Horii, Hideki ;

Ihm, Jisoon ;

Han, Seungwu .

PHYSICAL REVIEW B, 2010, 81 (24)

[9] Fundamental drift of parameters in chalcogenide phase change memory [J].

Karpov, I. V. ;

Mitra, M. ;

Kau, D. ;

Spadini, G. ;

Kryukov, Y. A. ;

Karpov, V. G. .

JOURNAL OF APPLIED PHYSICS, 2007, 102 (12)

[10] Direct evidence of phase separation in Ge2Sb2Te5 in phase change memory devices [J].

Kim, Cheolkyu ;

Kang, Dongmin ;

Lee, Tae-Yon ;

Kim, Kijoon H. P. ;

Kang, Youn-Seon ;

Lee, Junho ;

Nam, Sung-Wook ;

Kim, Ki-Bum ;

Khang, Yoonho .

APPLIED PHYSICS LETTERS, 2009, 94 (19)

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