共 50 条
- [42] Optical emission related to holes confined in p-type δ-doped layers in GaAs OPTICAL MICROSTRUCTURAL CHARACTERIZATION OF SEMICONDUCTORS, 2000, 588 : 123 - 128
- [44] INFLUENCE OF LIGHT HOLES ON TRANSPORT PHENOMENA IN p-TYPE GaAs CRYSTALS. Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov), 1976, 10 (01): : 72 - 74
- [46] DRIFT OF HOLES IN HIGH-RESISTIVITY P-TYPE CDSE CRYSTAL PLATES SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (12): : 1530 - 1532
- [47] Interacting valence holes in p-type SiGe quantum disks in a magnetic field Physical Review B: Condensed Matter, 55 (23):
- [48] AUGER RECOMBINATION IN P-TYPE SEMICONDUCTORS WITH DIFFERENT EFFECTIVE MASSES OF ELECTRONS AND HOLES IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1981, (09): : 125 - 127
- [49] TEMPERATURE-DEPENDENCE OF RELAXATION-TIME OF HOLES IN P-TYPE GAAS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 7 (08): : 1088 - 1088
- [50] THERMAL EMISSION OF HOLES FROM DEFECTS IN UNIAXIALLY STRESSED P-TYPE SILICON PHYSICAL REVIEW B, 1988, 38 (14): : 9857 - 9869