Generation-recombination noise of DX centers in AlN:Si

被引：18

作者：

Goennenwein, STB ^{[1
]}

Zeisel, R

Ambacher, O

Brandt, MS

Stutzmann, M

Baldovino, S

机构：

[1] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany

[2] INFM, Lab MDM, I-20041 Agrate Brianza, MI, Italy

来源：

APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 15期

关键词：

D O I：

10.1063/1.1405426

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Generation-recombination noise is observed in Si-doped aluminum nitride (AlN:Si). Both the magnitude and the characteristic frequency of the generation-recombination noise power density are found to be thermally activated. Using a model based on charge carrier number fluctuations in a two-level system, transition energies and potential barriers of the DX center formed by Si donors in AlN are quantitatively determined. (C) 2001 American Institute of Physics.

引用

页码：2396 / 2398

页数：3

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