Positron annihilation study of vacancy-like defects related to oxygen precipitates in Czochralski-type Si

被引：42

作者：

Brusa, RS ^{[1
]}

Deng, W

Karwasz, GP

Zecca, A

Pliszka, D

机构：

[1] Univ Trent, Dipartimento Fis, Ist Nazl Fis Mat, I-38050 Povo, TN, Italy

[2] Pedag Univ, Inst Phys, PL-76200 Slupsk, Poland

来源：

APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 10期

关键词：

D O I：

10.1063/1.1401782

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the direct measurement of vacancy-like defects related to oxygen in the oxygen precipitation process in Czochralski Si. The vacancy-like defects were detected by measuring the positron lifetime and narrowing of the positron-electron annihilation momentum distribution. Oxygen atoms surrounding the vacancy-like defects were detected by analyzing the high-momentum part of the positron-electron momentum distribution measured by a Doppler broadening coincidence technique. It was found that the majority of the defects associated with oxygen have an effective open volume smaller than that of a silicon monovacancy. (C) 2001 American Institute of Physics.

引用

页码：1492 / 1494

页数：3

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